Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory

• Main Authors: Pu, J., Kim, S.-J., Lee, S.-H., Kim, Y.-S., Kim, S.-T., Choi, K.-J., Cho, B.J.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Flash memory; Floating gate (FG); Retention; Silicon carbide (SiC-3C); Silicon carbide (Sic-3C)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82027
• Institution: National University of Singapore

10.1109/LED.2008.2000600