Post-growth rapid thermal annealing effect on hydrogenated amorphous silicon carbide thin film

Post-growth rapid thermal annealing effect on hydrogenated amorphous silicon carbide thin film

10.1016/S0925-9635(00)00450-7

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Bibliographic Details
Main Authors: Wang, Y.H., Lin, J., Huan, C.H.A., Feng, Z.C., Chua, S.J.
Other Authors: PHYSICS
Format: Article
Published: 2014
Subjects:
3C-SiC
Hydrogenated amorphous silicon carbide
Rapid thermal annealing
Statistically oriented
Online Access:http://scholarbank.nus.edu.sg/handle/10635/97576
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/97576

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