Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory

10.1109/LED.2008.2000600

Saved in:

Bibliographic Details
Main Authors:	Pu, J., Kim, S.-J., Lee, S.-H., Kim, Y.-S., Kim, S.-T., Choi, K.-J., Cho, B.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Flash memory Floating gate (FG) Retention Silicon carbide (SiC-3C) Silicon carbide (Sic-3C)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82027
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-82027
record_format	dspace
spelling	sg-nus-scholar.10635-820272023-10-26T22:06:47Z Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory Pu, J. Kim, S.-J. Lee, S.-H. Kim, Y.-S. Kim, S.-T. Choi, K.-J. Cho, B.J. ELECTRICAL & COMPUTER ENGINEERING Flash memory Floating gate (FG) Retention Silicon carbide (SiC-3C) Silicon carbide (Sic-3C) 10.1109/LED.2008.2000600 IEEE Electron Device Letters 29 7 688-690 EDLED 2014-10-07T04:24:32Z 2014-10-07T04:24:32Z 2008-07 Article Pu, J., Kim, S.-J., Lee, S.-H., Kim, Y.-S., Kim, S.-T., Choi, K.-J., Cho, B.J. (2008-07). Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory. IEEE Electron Device Letters 29 (7) : 688-690. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000600 07413106 http://scholarbank.nus.edu.sg/handle/10635/82027 000257626000011 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Flash memory Floating gate (FG) Retention Silicon carbide (SiC-3C) Silicon carbide (Sic-3C)
spellingShingle	Flash memory Floating gate (FG) Retention Silicon carbide (SiC-3C) Silicon carbide (Sic-3C) Pu, J. Kim, S.-J. Lee, S.-H. Kim, Y.-S. Kim, S.-T. Choi, K.-J. Cho, B.J. Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory
description	10.1109/LED.2008.2000600
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Pu, J. Kim, S.-J. Lee, S.-H. Kim, Y.-S. Kim, S.-T. Choi, K.-J. Cho, B.J.
format	Article
author	Pu, J. Kim, S.-J. Lee, S.-H. Kim, Y.-S. Kim, S.-T. Choi, K.-J. Cho, B.J.
author_sort	Pu, J.
title	Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory
title_short	Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory
title_full	Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory
title_fullStr	Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory
title_full_unstemmed	Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory
title_sort	carbon-doped polysilicon floating gate for improved data retention and p/e window of flash memory
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82027
_version_	1781784044365676544

Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory

Similar Items