P-Type floating gate for retention and P/E window improvement of flash memory devices

P-Type floating gate for retention and P/E window improvement of flash memory devices

10.1109/TED.2007.900680

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Bibliographic Details
Main Authors: Shen, C., Pu, J., Li, M.-F., Cho, B.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Coupling ratio (CR)
Electrically erasable programmable read-only memory (EEPROM)
Flash memory
Floating gate
P-type
Retention
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82943
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82943

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