P-Type floating gate for retention and P/E window improvement of flash memory devices

10.1109/TED.2007.900680

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Bibliographic Details
Main Authors:	Shen, C., Pu, J., Li, M.-F., Cho, B.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Coupling ratio (CR) Electrically erasable programmable read-only memory (EEPROM) Flash memory Floating gate P-type Retention
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82943
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82943
record_format	dspace
spelling	sg-nus-scholar.10635-829432023-10-27T08:56:53Z P-Type floating gate for retention and P/E window improvement of flash memory devices Shen, C. Pu, J. Li, M.-F. Cho, B.J. ELECTRICAL & COMPUTER ENGINEERING Coupling ratio (CR) Electrically erasable programmable read-only memory (EEPROM) Flash memory Floating gate P-type Retention 10.1109/TED.2007.900680 IEEE Transactions on Electron Devices 54 8 1910-1917 IETDA 2014-10-07T04:35:21Z 2014-10-07T04:35:21Z 2007-08 Article Shen, C., Pu, J., Li, M.-F., Cho, B.J. (2007-08). P-Type floating gate for retention and P/E window improvement of flash memory devices. IEEE Transactions on Electron Devices 54 (8) : 1910-1917. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.900680 00189383 http://scholarbank.nus.edu.sg/handle/10635/82943 000248390600013 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Coupling ratio (CR) Electrically erasable programmable read-only memory (EEPROM) Flash memory Floating gate P-type Retention
spellingShingle	Coupling ratio (CR) Electrically erasable programmable read-only memory (EEPROM) Flash memory Floating gate P-type Retention Shen, C. Pu, J. Li, M.-F. Cho, B.J. P-Type floating gate for retention and P/E window improvement of flash memory devices
description	10.1109/TED.2007.900680
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Shen, C. Pu, J. Li, M.-F. Cho, B.J.
format	Article
author	Shen, C. Pu, J. Li, M.-F. Cho, B.J.
author_sort	Shen, C.
title	P-Type floating gate for retention and P/E window improvement of flash memory devices
title_short	P-Type floating gate for retention and P/E window improvement of flash memory devices
title_full	P-Type floating gate for retention and P/E window improvement of flash memory devices
title_fullStr	P-Type floating gate for retention and P/E window improvement of flash memory devices
title_full_unstemmed	P-Type floating gate for retention and P/E window improvement of flash memory devices
title_sort	p-type floating gate for retention and p/e window improvement of flash memory devices
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82943
_version_	1781784258258403328

P-Type floating gate for retention and P/E window improvement of flash memory devices

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