P-Type floating gate for retention and P/E window improvement of flash memory devices

• Main Authors: Shen, C., Pu, J., Li, M.-F., Cho, B.J.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Coupling ratio (CR); Electrically erasable programmable read-only memory (EEPROM); Flash memory; Floating gate; P-type; Retention
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82943
• Institution: National University of Singapore

10.1109/TED.2007.900680