Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices

Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices

10.1109/TED.2009.2030834

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Bibliographic Details
Main Authors: Pu, J., Chan, D.S.H., Kim, S.-J., Cho, B.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Flash memory
GdAlOx blocking layer
Polysilicon-silicon oxide-silicon nitride-silicon oxide-silicon (SONOS)
Retension
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81946
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/81946

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