Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices

10.1109/TED.2009.2030834

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Bibliographic Details
Main Authors:	Pu, J., Chan, D.S.H., Kim, S.-J., Cho, B.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Flash memory GdAlOx blocking layer Polysilicon-silicon oxide-silicon nitride-silicon oxide-silicon (SONOS) Retension
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81946
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-81946
record_format	dspace
spelling	sg-nus-scholar.10635-819462023-10-26T21:45:19Z Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices Pu, J. Chan, D.S.H. Kim, S.-J. Cho, B.J. ELECTRICAL & COMPUTER ENGINEERING Flash memory GdAlOx blocking layer Polysilicon-silicon oxide-silicon nitride-silicon oxide-silicon (SONOS) Retension 10.1109/TED.2009.2030834 IEEE Transactions on Electron Devices 56 11 2739-2745 IETDA 2014-10-07T04:23:33Z 2014-10-07T04:23:33Z 2009 Article Pu, J., Chan, D.S.H., Kim, S.-J., Cho, B.J. (2009). Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices. IEEE Transactions on Electron Devices 56 (11) : 2739-2745. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2030834 00189383 http://scholarbank.nus.edu.sg/handle/10635/81946 000271019500047 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Flash memory GdAlOx blocking layer Polysilicon-silicon oxide-silicon nitride-silicon oxide-silicon (SONOS) Retension
spellingShingle	Flash memory GdAlOx blocking layer Polysilicon-silicon oxide-silicon nitride-silicon oxide-silicon (SONOS) Retension Pu, J. Chan, D.S.H. Kim, S.-J. Cho, B.J. Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices
description	10.1109/TED.2009.2030834
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Pu, J. Chan, D.S.H. Kim, S.-J. Cho, B.J.
format	Article
author	Pu, J. Chan, D.S.H. Kim, S.-J. Cho, B.J.
author_sort	Pu, J.
title	Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices
title_short	Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices
title_full	Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices
title_fullStr	Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices
title_full_unstemmed	Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices
title_sort	aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81946
_version_	1781784023437148160

Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices

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