Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices

• Main Authors: Pu, J., Chan, D.S.H., Kim, S.-J., Cho, B.J.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Flash memory; GdAlOx blocking layer; Polysilicon-silicon oxide-silicon nitride-silicon oxide-silicon (SONOS); Retension
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81946
• Institution: National University of Singapore

10.1109/TED.2009.2030834