Excellent surface passivation of heavily doped p+ silicon by low-temperature plasma-deposited SiOx/SiNy dielectric stacks with optimised antireflective performance for solar cell application

Excellent surface passivation of heavily doped p+ silicon by low-temperature plasma-deposited SiOx/SiNy dielectric stacks with optimised antireflective performance for solar cell application

10.1016/j.solmat.2013.09.004

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Bibliographic Details
Main Authors: Duttagupta, S., Ma, F.-J., Hoex, B., Aberle, A.G.
Other Authors: SOLAR ENERGY RESEARCH INST OF S'PORE
Format: Article
Published: 2014
Subjects:
Boron doped p+ emitters
Crystalline silicon
Plasma-enhanced chemical vapor deposition
Silicon oxide/Silicon nitride dielectric stacks
Surface passivation
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82313
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82313

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