Excellent surface passivation of heavily doped p+ silicon by low-temperature plasma-deposited SiOx/SiNy dielectric stacks with optimised antireflective performance for solar cell application

• Main Authors: Duttagupta, S., Ma, F.-J., Hoex, B., Aberle, A.G.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Boron doped p+ emitters; Crystalline silicon; Plasma-enhanced chemical vapor deposition; Silicon oxide/Silicon nitride dielectric stacks; Surface passivation
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82313
• Institution: National University of Singapore

10.1016/j.solmat.2013.09.004