Low-Absorbing and Thermally Stable Industrial Silicon Nitride Films With Very Low Surface Recombination

Low-Absorbing and Thermally Stable Industrial Silicon Nitride Films With Very Low Surface Recombination

10.1109/JPHOTOV.2017.2706424

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Bibliographic Details
Main Authors: Hameiri, Ziv, Borojevic, Nino, Mai, Ly, Nandakumar, Naomi, Kim, Kyung, Winderbaum, Saul
Other Authors: SOLAR ENERGY RESEARCH INST OF S'PORE
Format: Article
Language:English
Published: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
Subjects:
Science & Technology
Technology
Physical Sciences
Energy & Fuels
Materials Science, Multidisciplinary
Physics, Applied
Materials Science
Physics
Photovoltaic cells
silicon
silicon nitride
surface passivation
INTRINSIC CARRIER DENSITY
CHEMICAL-VAPOR-DEPOSITION
CRYSTALLINE SILICON
SOLAR-CELLS
PASSIVATION
HYDROGEN
SI
J(0)-ANALYSIS
PECVD
Online Access:https://scholarbank.nus.edu.sg/handle/10635/155041
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Institution: National University of Singapore
Language: English

Internet

https://scholarbank.nus.edu.sg/handle/10635/155041

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