Low-Absorbing and Thermally Stable Industrial Silicon Nitride Films With Very Low Surface Recombination

Low-Absorbing and Thermally Stable Industrial Silicon Nitride Films With Very Low Surface Recombination

10.1109/JPHOTOV.2017.2706424

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Bibliographic Details
Main Authors:	Hameiri, Ziv, Borojevic, Nino, Mai, Ly, Nandakumar, Naomi, Kim, Kyung, Winderbaum, Saul
Other Authors:	SOLAR ENERGY RESEARCH INST OF S'PORE
Format:	Article
Language:	English
Published:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
Subjects:	Science & Technology Technology Physical Sciences Energy & Fuels Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Photovoltaic cells silicon silicon nitride surface passivation INTRINSIC CARRIER DENSITY CHEMICAL-VAPOR-DEPOSITION CRYSTALLINE SILICON SOLAR-CELLS PASSIVATION HYDROGEN SI J(0)-ANALYSIS PECVD
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/155041
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Institution:	National University of Singapore
Language:	English

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Summary:	10.1109/JPHOTOV.2017.2706424