A heavily doped germanium pyramid array for tunable optical antireflection in the broadband mid-infrared range

• المؤلفون الرئيسيون: Son, Bongkwon, Shin, Sang-Ho, Jin, Yuhao, Liao, Yikai, Zhao, Zhi-Jun, Jeong, Jun-Ho, Wang, Qi Jie, Wang, Xincai, Tan, Chuan Seng, Kim, Munho
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Engineering::Electrical and electronic engineering::Semiconductors; Silicon; Germanium
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/156827
• المؤسسة: Nanyang Technological University

In this work, we report the heavily doped germanium (Ge) inverted pyramid array as a suitable candidate for tunable antireflection in mid-infrared (MIR) range. Inverted Ge pyramid structures are formed by the metal-assisted chemical etching process. The heavy doping profile in a box shape is obtaine...