Black germanium photodetector exceeds external quantum efficiency of 160%

• Main Authors: An, Shu, Liao, Yikai, Shin, Sang-Ho, Kim, Munho
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2022
• Subjects: Engineering::Electrical and electronic engineering; Black Germanium; Enhanced Responsivity
• Online Access: https://hdl.handle.net/10356/156884
• Institution: Nanyang Technological University

In this work, a viable method is demonstrated to realize high-performance germanium (Ge) photodetectors (PDs) on the nanostructured Ge surface, namely black Ge, formed by chlorine (Cl2) gas-based reactive ion etching at room temperature. Black Ge surface has spike-like pyramidal structures with a wi...