Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs

Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs

10.1109/TED.2002.1013271

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Bibliographic Details
Main Authors: Yu, H., Hou, Y.-T., Li, M.-F., Kwong, D.-L.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Hole tunneling current
MOSFET
NO stack
Scaling limits
Silicon oxynitrides
Ultrathin gate dielectrics
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80633
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/80633

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