Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs

• Main Authors: Yu, H., Hou, Y.-T., Li, M.-F., Kwong, D.-L.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Hole tunneling current; MOSFET; NO stack; Scaling limits; Silicon oxynitrides; Ultrathin gate dielectrics
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/80633
• Institution: National University of Singapore

10.1109/TED.2002.1013271