Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs

10.1109/TED.2002.1013271

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Bibliographic Details
Main Authors:	Yu, H., Hou, Y.-T., Li, M.-F., Kwong, D.-L.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Subjects:	Hole tunneling current MOSFET NO stack Scaling limits Silicon oxynitrides Ultrathin gate dielectrics
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80633
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-80633
record_format	dspace
spelling	sg-nus-scholar.10635-806332023-10-29T20:58:48Z Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs Yu, H. Hou, Y.-T. Li, M.-F. Kwong, D.-L. ELECTRICAL ENGINEERING ELECTRICAL & COMPUTER ENGINEERING Hole tunneling current MOSFET NO stack Scaling limits Silicon oxynitrides Ultrathin gate dielectrics 10.1109/TED.2002.1013271 IEEE Transactions on Electron Devices 49 7 1158-1164 IETDA 2014-10-07T02:59:39Z 2014-10-07T02:59:39Z 2002-07 Article Yu, H., Hou, Y.-T., Li, M.-F., Kwong, D.-L. (2002-07). Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs. IEEE Transactions on Electron Devices 49 (7) : 1158-1164. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2002.1013271 00189383 http://scholarbank.nus.edu.sg/handle/10635/80633 000176532900010 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Hole tunneling current MOSFET NO stack Scaling limits Silicon oxynitrides Ultrathin gate dielectrics
spellingShingle	Hole tunneling current MOSFET NO stack Scaling limits Silicon oxynitrides Ultrathin gate dielectrics Yu, H. Hou, Y.-T. Li, M.-F. Kwong, D.-L. Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs
description	10.1109/TED.2002.1013271
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Yu, H. Hou, Y.-T. Li, M.-F. Kwong, D.-L.
format	Article
author	Yu, H. Hou, Y.-T. Li, M.-F. Kwong, D.-L.
author_sort	Yu, H.
title	Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs
title_short	Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs
title_full	Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs
title_fullStr	Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs
title_full_unstemmed	Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs
title_sort	investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-mosfets
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80633
_version_	1781783929521438720

Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs

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