Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation

Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation

10.1109/LED.2006.880655

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Bibliographic Details
Main Authors: Zhang, Q., Huang, J., Wu, N., Chen, G., Hong, M., Bera, L.K., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Germanium
High-κ gate dielectric
Laser annealing (LA)
MOSFET
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82176
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82176

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