Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation

• Main Authors: Zhang, Q., Huang, J., Wu, N., Chen, G., Hong, M., Bera, L.K., Zhu, C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Germanium; High-κ gate dielectric; Laser annealing (LA); MOSFET
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82176
• Institution: National University of Singapore

10.1109/LED.2006.880655