Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation

10.1109/LED.2006.880655

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Bibliographic Details
Main Authors:	Zhang, Q., Huang, J., Wu, N., Chen, G., Hong, M., Bera, L.K., Zhu, C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Germanium High-κ gate dielectric Laser annealing (LA) MOSFET
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82176
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Institution:	National University of Singapore

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Summary:	10.1109/LED.2006.880655

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