Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation

10.1109/LED.2006.880655

Saved in:

Bibliographic Details
Main Authors:	Zhang, Q., Huang, J., Wu, N., Chen, G., Hong, M., Bera, L.K., Zhu, C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Germanium High-κ gate dielectric Laser annealing (LA) MOSFET
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82176
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-82176
record_format	dspace
spelling	sg-nus-scholar.10635-821762023-10-29T23:35:14Z Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation Zhang, Q. Huang, J. Wu, N. Chen, G. Hong, M. Bera, L.K. Zhu, C. ELECTRICAL & COMPUTER ENGINEERING NUS NANOSCIENCE & NANOTECH INITIATIVE Germanium High-κ gate dielectric Laser annealing (LA) MOSFET 10.1109/LED.2006.880655 IEEE Electron Device Letters 27 9 728-730 EDLED 2014-10-07T04:26:17Z 2014-10-07T04:26:17Z 2006-09 Article Zhang, Q., Huang, J., Wu, N., Chen, G., Hong, M., Bera, L.K., Zhu, C. (2006-09). Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation. IEEE Electron Device Letters 27 (9) : 728-730. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.880655 07413106 http://scholarbank.nus.edu.sg/handle/10635/82176 000240008800007 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Germanium High-κ gate dielectric Laser annealing (LA) MOSFET
spellingShingle	Germanium High-κ gate dielectric Laser annealing (LA) MOSFET Zhang, Q. Huang, J. Wu, N. Chen, G. Hong, M. Bera, L.K. Zhu, C. Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation
description	10.1109/LED.2006.880655
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Zhang, Q. Huang, J. Wu, N. Chen, G. Hong, M. Bera, L.K. Zhu, C.
format	Article
author	Zhang, Q. Huang, J. Wu, N. Chen, G. Hong, M. Bera, L.K. Zhu, C.
author_sort	Zhang, Q.
title	Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation
title_short	Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation
title_full	Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation
title_fullStr	Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation
title_full_unstemmed	Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation
title_sort	drive-current enhancement in ge n-channel mosfet using laser annealing for source/drain activation
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82176
_version_	1781784074261626880

Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation

Similar Items