Reliability modeling of ultra-thin gate oxide and high-k dielectrics for nano-scale CMOS devices

Reliability modeling of ultra-thin gate oxide and high-k dielectrics for nano-scale CMOS devices

Ph.D

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Bibliographic Details
Main Author: LOH WEI YIP
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Theses and Dissertations
Language:English
Published: 2010
Subjects:
Quasi-breakdown, oxide degradation, gate leakage current, ultra-thin gate oxide, dielectric reliability, high-K dielectrics
Online Access:http://scholarbank.nus.edu.sg/handle/10635/14505
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Institution: National University of Singapore
Language: English

Internet

http://scholarbank.nus.edu.sg/handle/10635/14505

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