Reliability modeling of ultra-thin gate oxide and high-k dielectrics for nano-scale CMOS devices

Ph.D

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Main Author:	LOH WEI YIP
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2010
Subjects:	Quasi-breakdown, oxide degradation, gate leakage current, ultra-thin gate oxide, dielectric reliability, high-K dielectrics
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/14505
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-14505
record_format	dspace
spelling	sg-nus-scholar.10635-145052015-01-05T21:34:53Z Reliability modeling of ultra-thin gate oxide and high-k dielectrics for nano-scale CMOS devices LOH WEI YIP ELECTRICAL & COMPUTER ENGINEERING CHO BYUNG-JIN LI MING-FU Quasi-breakdown, oxide degradation, gate leakage current, ultra-thin gate oxide, dielectric reliability, high-K dielectrics Ph.D DOCTOR OF PHILOSOPHY 2010-04-08T10:43:50Z 2010-04-08T10:43:50Z 2005-01-13 Thesis LOH WEI YIP (2005-01-13). Reliability modeling of ultra-thin gate oxide and high-k dielectrics for nano-scale CMOS devices. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/14505 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
language	English
topic	Quasi-breakdown, oxide degradation, gate leakage current, ultra-thin gate oxide, dielectric reliability, high-K dielectrics
spellingShingle	Quasi-breakdown, oxide degradation, gate leakage current, ultra-thin gate oxide, dielectric reliability, high-K dielectrics LOH WEI YIP Reliability modeling of ultra-thin gate oxide and high-k dielectrics for nano-scale CMOS devices
description	Ph.D
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING LOH WEI YIP
format	Theses and Dissertations
author	LOH WEI YIP
author_sort	LOH WEI YIP
title	Reliability modeling of ultra-thin gate oxide and high-k dielectrics for nano-scale CMOS devices
title_short	Reliability modeling of ultra-thin gate oxide and high-k dielectrics for nano-scale CMOS devices
title_full	Reliability modeling of ultra-thin gate oxide and high-k dielectrics for nano-scale CMOS devices
title_fullStr	Reliability modeling of ultra-thin gate oxide and high-k dielectrics for nano-scale CMOS devices
title_full_unstemmed	Reliability modeling of ultra-thin gate oxide and high-k dielectrics for nano-scale CMOS devices
title_sort	reliability modeling of ultra-thin gate oxide and high-k dielectrics for nano-scale cmos devices
publishDate	2010
url	http://scholarbank.nus.edu.sg/handle/10635/14505
_version_	1681079038333943808

Reliability modeling of ultra-thin gate oxide and high-k dielectrics for nano-scale CMOS devices

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