A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 K

A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 K

10.1109/16.737470

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Bibliographic Details
Main Authors: Ling, C.H., See, L.K.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Impact ionization rate
Low temperature
Mosfet's
Nonstationary effects
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80275
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/80275

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