A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 K
10.1109/16.737470
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Main Authors: | Ling, C.H., See, L.K. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
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Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80275 |
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Institution: | National University of Singapore |
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