A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 K

A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 K

10.1109/16.737470

Saved in:
Bibliographic Details
Main Authors: Ling, C.H., See, L.K.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Impact ionization rate
Low temperature
Mosfet's
Nonstationary effects
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80275
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
id sg-nus-scholar.10635-80275
record_format dspace
spelling sg-nus-scholar.10635-802752023-10-29T22:35:35Z A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 K Ling, C.H. See, L.K. ELECTRICAL ENGINEERING Impact ionization rate Low temperature Mosfet's Nonstationary effects 10.1109/16.737470 IEEE Transactions on Electron Devices 46 1 263-266 IETDA 2014-10-07T02:55:44Z 2014-10-07T02:55:44Z 1999 Article Ling, C.H., See, L.K. (1999). A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 K. IEEE Transactions on Electron Devices 46 (1) : 263-266. ScholarBank@NUS Repository. https://doi.org/10.1109/16.737470 00189383 http://scholarbank.nus.edu.sg/handle/10635/80275 000077769000037 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Impact ionization rate
Low temperature
Mosfet's
Nonstationary effects
spellingShingle Impact ionization rate
Low temperature
Mosfet's
Nonstationary effects
Ling, C.H.
See, L.K.
A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 K
description 10.1109/16.737470
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Ling, C.H.
See, L.K.
format Article
author Ling, C.H.
See, L.K.
author_sort Ling, C.H.
title A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 K
title_short A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 K
title_full A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 K
title_fullStr A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 K
title_full_unstemmed A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 K
title_sort modified lucky electron model for impact lonization rate in nmosfet's at 77 k
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/80275
_version_ 1781783895058939904

Similar Items