A modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETs

• Main Authors: Huang, D., Liu, W.J., Liu, Z.Y., Liao, C.C., Zhang, L.-F., Gan, Z., Wong, W., Li, M.-F.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Charge pumping (CP); Interface traps; MOSFETs; Negative-bias temperature instability (NBTI); Reaction-diffusion model
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81883
• Institution: National University of Singapore

10.1109/TED.2008.2010585