Full silicidation of silicon gate electrodes using nickel-terbium alloy for MOSFET applications

Full silicidation of silicon gate electrodes using nickel-terbium alloy for MOSFET applications

10.1149/1.2171827

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Bibliographic Details
Main Authors: Lim, A.E.-J., Lee, R.T.P., Tung, C.H., Tripathy, S., Kwong, D.-L., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56098
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/56098

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