Perspective of flash memory realized on vertical Si nanowires

• المؤلفون الرئيسيون: Yu, Hongyu, Sun, Yuan, Singh, Navab, Lo, Guo-Qing, Kwong, Dim Lee
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/96165; http://hdl.handle.net/10220/11120

In this review article, the scaling challenges of planar non-volatile memory, especially the flash-types including both floating gate-based and charge-trap-based devices are firstly discussed. The promising prospects brought by 3-Dimensional (3-D) nano-wire-based cells have been presented along with...