Perspective of flash memory realized on vertical Si nanowires
In this review article, the scaling challenges of planar non-volatile memory, especially the flash-types including both floating gate-based and charge-trap-based devices are firstly discussed. The promising prospects brought by 3-Dimensional (3-D) nano-wire-based cells have been presented along with...
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/96165 http://hdl.handle.net/10220/11120 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | In this review article, the scaling challenges of planar non-volatile memory, especially the flash-types including both floating gate-based and charge-trap-based devices are firstly discussed. The promising prospects brought by 3-Dimensional (3-D) nano-wire-based cells have been presented along with various device demonstrations and discussions on vertical nano-wire platform. The memory devices with highly scaled single-crystal Si nanowire (SiNW) channel and a gate-all-around (GAA) structure achieve superior program/erase (P/E) speed, cycling and high-temperature retention characteristics as compared to the planar one and are considered as promising candidate for future ultra-high non-volatile flash memory application. |
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