Electrical characterization of Si Nanowire based devices – transistors and SONOS memory

A vertical gate-all-around (GAA) non-volatile memory (NVM) SONOS and PMOS vertical gate-all-around (GAA) Silicon Nanowire with the height of 150nm and diameter of ~20nm for the memory and height of 600~700nm and diameter of ~5nm is being study. In this work, the main aim is to find out the electrica...

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Bibliographic Details
Main Author: Xiong, Tian Zhong.
Other Authors: Yu Hongyu
Format: Final Year Project
Language:English
Published: 2010
Subjects:
Online Access:http://hdl.handle.net/10356/40239
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Institution: Nanyang Technological University
Language: English