Electrical characterization of Si Nanowire based devices – transistors and SONOS memory

• Main Author: Xiong, Tian Zhong.
• Other Authors: Yu Hongyu
• Format: Final Year Project
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/40239
• Institution: Nanyang Technological University

A vertical gate-all-around (GAA) non-volatile memory (NVM) SONOS and PMOS vertical gate-all-around (GAA) Silicon Nanowire with the height of 150nm and diameter of ~20nm for the memory and height of 600~700nm and diameter of ~5nm is being study. In this work, the main aim is to find out the electrica...