Piezoresistive sensing performance of junctionless nanowire FET

• المؤلفون الرئيسيون: Singh, Pushpapraj, Miao, Jianmin, Pott, Vincent, Park, Woo-Tae, Kwong, Dim Lee
• مؤلفون آخرون: School of Mechanical and Aerospace Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Mechanical engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97805; http://hdl.handle.net/10220/11345

This letter investigates junctionless nanowire field-effect transistor (NWFET) (JL-NWFET) parameters such as piezoresistance and low-frequency noise (LFN) with respect to channel doping and gate bias. The JL-NWFET is piezoresistive, and its gauge factor (GF ) is increased from 24 to 47 by reducing t...