Sub-10 nm Scalability of Junctionless FETs Using a Ground Plane in High-K BOX: A Simulation Study

• Main Authors: Jain, A.K., Kumar, M.J.
• Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
• Format: Article
• Published: Institute of Electrical and Electronics Engineers Inc. 2021
• Subjects: Band-to-band tunneling (BTBT); drain induced barrier lowering (DIBL); gate induced drain leakage (GIDL); Junctionless FET (JLFET); parasitic bipolar junction transistor (BJT)
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/198377
• Institution: National University of Singapore

10.1109/ACCESS.2020.3012579