Sub-10 nm Scalability of Junctionless FETs Using a Ground Plane in High-K BOX: A Simulation Study
10.1109/ACCESS.2020.3012579
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2021
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sg-nus-scholar.10635-1983772024-11-09T13:11:34Z Sub-10 nm Scalability of Junctionless FETs Using a Ground Plane in High-K BOX: A Simulation Study Jain, A.K. Kumar, M.J. ELECTRICAL AND COMPUTER ENGINEERING Band-to-band tunneling (BTBT) drain induced barrier lowering (DIBL) gate induced drain leakage (GIDL) Junctionless FET (JLFET) parasitic bipolar junction transistor (BJT) 10.1109/ACCESS.2020.3012579 IEEE Access 8 137540-137548 2021-08-20T02:48:52Z 2021-08-20T02:48:52Z 2020 Article Jain, A.K., Kumar, M.J. (2020). Sub-10 nm Scalability of Junctionless FETs Using a Ground Plane in High-K BOX: A Simulation Study. IEEE Access 8 : 137540-137548. ScholarBank@NUS Repository. https://doi.org/10.1109/ACCESS.2020.3012579 21693536 https://scholarbank.nus.edu.sg/handle/10635/198377 Institute of Electrical and Electronics Engineers Inc. Scopus OA2020 |
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Band-to-band tunneling (BTBT) drain induced barrier lowering (DIBL) gate induced drain leakage (GIDL) Junctionless FET (JLFET) parasitic bipolar junction transistor (BJT) |
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Band-to-band tunneling (BTBT) drain induced barrier lowering (DIBL) gate induced drain leakage (GIDL) Junctionless FET (JLFET) parasitic bipolar junction transistor (BJT) Jain, A.K. Kumar, M.J. Sub-10 nm Scalability of Junctionless FETs Using a Ground Plane in High-K BOX: A Simulation Study |
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10.1109/ACCESS.2020.3012579 |
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ELECTRICAL AND COMPUTER ENGINEERING |
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ELECTRICAL AND COMPUTER ENGINEERING Jain, A.K. Kumar, M.J. |
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Article |
author |
Jain, A.K. Kumar, M.J. |
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Jain, A.K. |
title |
Sub-10 nm Scalability of Junctionless FETs Using a Ground Plane in High-K BOX: A Simulation Study |
title_short |
Sub-10 nm Scalability of Junctionless FETs Using a Ground Plane in High-K BOX: A Simulation Study |
title_full |
Sub-10 nm Scalability of Junctionless FETs Using a Ground Plane in High-K BOX: A Simulation Study |
title_fullStr |
Sub-10 nm Scalability of Junctionless FETs Using a Ground Plane in High-K BOX: A Simulation Study |
title_full_unstemmed |
Sub-10 nm Scalability of Junctionless FETs Using a Ground Plane in High-K BOX: A Simulation Study |
title_sort |
sub-10 nm scalability of junctionless fets using a ground plane in high-k box: a simulation study |
publisher |
Institute of Electrical and Electronics Engineers Inc. |
publishDate |
2021 |
url |
https://scholarbank.nus.edu.sg/handle/10635/198377 |
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