Sub-10 nm Scalability of Junctionless FETs Using a Ground Plane in High-K BOX: A Simulation Study
10.1109/ACCESS.2020.3012579
Saved in:
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2021
|
| Subjects: | |
| Online Access: | https://scholarbank.nus.edu.sg/handle/10635/198377 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | National University of Singapore |