Compact modeling of gate-all-around silicon nanowire MOSFETs

• 主要作者: Lin Shihuan
• 其他作者: Ang Lay Kee, Ricky
• 格式: Theses and Dissertations
• 語言: English
• 出版: 2012
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• 在線閱讀: https://hdl.handle.net/10356/48643

This thesis documents the compact model development for the silicon nanowire MOSFET. A surface-potential based scalable model is developed for silicon nanowire MOSFET. An accurate surface potential initial guess is derived for the iterative surface potential solution within a few iteration steps. An...