Compact modeling of gate-all-around silicon nanowire MOSFETs

• Main Author: Lin Shihuan
• Other Authors: Ang Lay Kee, Ricky
• Format: Theses and Dissertations
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• Online Access: https://hdl.handle.net/10356/48643
• Institution: Nanyang Technological University

This thesis documents the compact model development for the silicon nanowire MOSFET. A surface-potential based scalable model is developed for silicon nanowire MOSFET. An accurate surface potential initial guess is derived for the iterative surface potential solution within a few iteration steps. An...