Compact modeling of gate-all-around silicon nanowire MOSFETs

• المؤلف الرئيسي: Lin Shihuan
• مؤلفون آخرون: Ang Lay Kee, Ricky
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/48643

This thesis documents the compact model development for the silicon nanowire MOSFET. A surface-potential based scalable model is developed for silicon nanowire MOSFET. An accurate surface potential initial guess is derived for the iterative surface potential solution within a few iteration steps. An...