Vertical silicon nanowire diode with nickel silicide induced dopant segregation

Vertical silicon nanowire diode with nickel silicide induced dopant segregation

Dopant segregated Schottky barrier (DSSB) and Schottky barrier (SB) vertical silicon nanowire (VSiNW) diodes were fabricated using industry complemetary metal oxide semiconductor field effect transistor (CMOS) processes to investigate the effects of segregated dopants at the silicide/silicon interfa...

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Bibliographic Details
Main Authors: Li, Xiang, Tan, Chuan Seng, Lu, Weijie, Pey, Kin Leong, Wang, Xinpeng, Chen, Zhixian, Navab, Singh, Leong, Kam Chew, Gan, Chee Lip
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/96854
http://hdl.handle.net/10220/11667
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/96854
http://hdl.handle.net/10220/11667

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