Vertical silicon nanowire diode with nickel silicide induced dopant segregation

• المؤلفون الرئيسيون: Li, Xiang, Tan, Chuan Seng, Lu, Weijie, Pey, Kin Leong, Wang, Xinpeng, Chen, Zhixian, Navab, Singh, Leong, Kam Chew, Gan, Chee Lip
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/96854; http://hdl.handle.net/10220/11667

Dopant segregated Schottky barrier (DSSB) and Schottky barrier (SB) vertical silicon nanowire (VSiNW) diodes were fabricated using industry complemetary metal oxide semiconductor field effect transistor (CMOS) processes to investigate the effects of segregated dopants at the silicide/silicon interfa...