Vertical silicon nanowire diode with nickel silicide induced dopant segregation

• Main Authors: Li, Xiang, Tan, Chuan Seng, Lu, Weijie, Pey, Kin Leong, Wang, Xinpeng, Chen, Zhixian, Navab, Singh, Leong, Kam Chew, Gan, Chee Lip
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/96854; http://hdl.handle.net/10220/11667
• Institution: Nanyang Technological University

Dopant segregated Schottky barrier (DSSB) and Schottky barrier (SB) vertical silicon nanowire (VSiNW) diodes were fabricated using industry complemetary metal oxide semiconductor field effect transistor (CMOS) processes to investigate the effects of segregated dopants at the silicide/silicon interfa...