Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels

We demonstrate high-performance Schottky CMOS transistors with NiSi source/drain and gate-all-around (GAA) silicon nanowire (~5 nm) channels. The transistors exhibit good Ion/Ioff characteristics, along with fully controlled shortchannel...

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Main Authors: Tang, L. J., Ho, C. K. F., Tan, Eu Jin, Pey, Kin Leong, Singh, Navab, Lo, Guo-Qiang, Chi, Dong Zhi, Chin, Yoke King, Lee, Pooi See
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
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Online Access:https://hdl.handle.net/10356/90670
http://hdl.handle.net/10220/8344
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-906702023-07-14T15:52:52Z Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels Tang, L. J. Ho, C. K. F. Tan, Eu Jin Pey, Kin Leong Singh, Navab Lo, Guo-Qiang Chi, Dong Zhi Chin, Yoke King Lee, Pooi See School of Materials Science & Engineering DRNTU::Engineering::Materials We demonstrate high-performance Schottky CMOS transistors with NiSi source/drain and gate-all-around (GAA) silicon nanowire (~5 nm) channels. The transistors exhibit good Ion/Ioff characteristics, along with fully controlled shortchannel effects revealed by low drain-induced barrier lowering (~10 mV/V) and near-ideal subthreshold swing (~60 mV/dec). Although the N-MOSFET required dopant segregation to suppress the ambipolar behavior, excellent P-MOSFET characteristics could be achieved without the use of barrier modification techniques. We attribute this to the Schottky barrier thinning in a nanosized metal–semiconductor junction and superior gate electrostatic control in a GAA nanowire architecture. Accepted version 2012-07-26T04:12:25Z 2019-12-06T17:51:53Z 2012-07-26T04:12:25Z 2019-12-06T17:51:53Z 2008 2008 Journal Article Tan, E. J., Pey, K. L., Singh, N., Lo, G. Q., Chi, D. Z., Chin, Y. K., et al. (2008). Nickel-silicided Schottky Junction CMOS Transistors with Gate-all-around Nanowire Channels. IEEE Electron Device Letters, 29(8), 902-905. https://hdl.handle.net/10356/90670 http://hdl.handle.net/10220/8344 10.1109/LED.2008.2000876 en IEEE electron device letters © 2008 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/LED.2008.2000876. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials
spellingShingle DRNTU::Engineering::Materials
Tang, L. J.
Ho, C. K. F.
Tan, Eu Jin
Pey, Kin Leong
Singh, Navab
Lo, Guo-Qiang
Chi, Dong Zhi
Chin, Yoke King
Lee, Pooi See
Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels
description We demonstrate high-performance Schottky CMOS transistors with NiSi source/drain and gate-all-around (GAA) silicon nanowire (~5 nm) channels. The transistors exhibit good Ion/Ioff characteristics, along with fully controlled shortchannel effects revealed by low drain-induced barrier lowering (~10 mV/V) and near-ideal subthreshold swing (~60 mV/dec). Although the N-MOSFET required dopant segregation to suppress the ambipolar behavior, excellent P-MOSFET characteristics could be achieved without the use of barrier modification techniques. We attribute this to the Schottky barrier thinning in a nanosized metal–semiconductor junction and superior gate electrostatic control in a GAA nanowire architecture.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Tang, L. J.
Ho, C. K. F.
Tan, Eu Jin
Pey, Kin Leong
Singh, Navab
Lo, Guo-Qiang
Chi, Dong Zhi
Chin, Yoke King
Lee, Pooi See
format Article
author Tang, L. J.
Ho, C. K. F.
Tan, Eu Jin
Pey, Kin Leong
Singh, Navab
Lo, Guo-Qiang
Chi, Dong Zhi
Chin, Yoke King
Lee, Pooi See
author_sort Tang, L. J.
title Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels
title_short Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels
title_full Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels
title_fullStr Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels
title_full_unstemmed Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels
title_sort nickel-silicided schottky junction cmos transistors with gate-all-around nanowire channels
publishDate 2012
url https://hdl.handle.net/10356/90670
http://hdl.handle.net/10220/8344
_version_ 1772828779846041600