Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels
We demonstrate high-performance Schottky CMOS transistors with NiSi source/drain and gate-all-around (GAA) silicon nanowire (~5 nm) channels. The transistors exhibit good Ion/Ioff characteristics, along with fully controlled shortchannel...
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| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/90670 http://hdl.handle.net/10220/8344 |
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| Institution: | Nanyang Technological University |
| Language: | English |