50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride liner

50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride liner

Digest of Technical Papers - Symposium on VLSI Technology

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Bibliographic Details
Main Authors: Ang, K.-W., Chui, K.-J., Chin, H.-C., Foo, Y.-L., Du, A., Deng, W., Li, M.-F., Samudra, G., Balasubramanian, N., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83301
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83301

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