50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride liner

• Main Authors: Ang, K.-W., Chui, K.-J., Chin, H.-C., Foo, Y.-L., Du, A., Deng, W., Li, M.-F., Samudra, G., Balasubramanian, N., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83301
• Institution: National University of Singapore

Digest of Technical Papers - Symposium on VLSI Technology