50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride liner

Digest of Technical Papers - Symposium on VLSI Technology

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Main Authors:	Ang, K.-W., Chui, K.-J., Chin, H.-C., Foo, Y.-L., Du, A., Deng, W., Li, M.-F., Samudra, G., Balasubramanian, N., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83301
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83301
record_format	dspace
spelling	sg-nus-scholar.10635-833012015-01-13T23:30:46Z 50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride liner Ang, K.-W. Chui, K.-J. Chin, H.-C. Foo, Y.-L. Du, A. Deng, W. Li, M.-F. Samudra, G. Balasubramanian, N. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Digest of Technical Papers - Symposium on VLSI Technology 66-67 DTPTE 2014-10-07T04:39:43Z 2014-10-07T04:39:43Z 2006 Conference Paper Ang, K.-W.,Chui, K.-J.,Chin, H.-C.,Foo, Y.-L.,Du, A.,Deng, W.,Li, M.-F.,Samudra, G.,Balasubramanian, N.,Yeo, Y.-C. (2006). 50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride liner. Digest of Technical Papers - Symposium on VLSI Technology : 66-67. ScholarBank@NUS Repository. 1424400058 07431562 http://scholarbank.nus.edu.sg/handle/10635/83301 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Digest of Technical Papers - Symposium on VLSI Technology
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ang, K.-W. Chui, K.-J. Chin, H.-C. Foo, Y.-L. Du, A. Deng, W. Li, M.-F. Samudra, G. Balasubramanian, N. Yeo, Y.-C.
format	Conference or Workshop Item
author	Ang, K.-W. Chui, K.-J. Chin, H.-C. Foo, Y.-L. Du, A. Deng, W. Li, M.-F. Samudra, G. Balasubramanian, N. Yeo, Y.-C.
spellingShingle	Ang, K.-W. Chui, K.-J. Chin, H.-C. Foo, Y.-L. Du, A. Deng, W. Li, M.-F. Samudra, G. Balasubramanian, N. Yeo, Y.-C. 50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride liner
author_sort	Ang, K.-W.
title	50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride liner
title_short	50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride liner
title_full	50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride liner
title_fullStr	50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride liner
title_full_unstemmed	50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride liner
title_sort	50 nm silicon-on-insulator n-mosfet featuring multiple stressors: silicon-carbon source/drain regions and tensile stress silicon nitride liner
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83301
_version_	1681089410642214912

50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride liner

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