Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner

Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner

10.1109/IEDM.2006.346814

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Bibliographic Details
Main Authors: Wang, G.H., Toh, E.-H., Toh, Hoe, K.M., Tripathy, S., Balakurnar, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84235
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/84235

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