Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner

10.1109/IEDM.2006.346814

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Main Authors:	Wang, G.H., Toh, E.-H., Toh, Hoe, K.M., Tripathy, S., Balakurnar, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84235
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84235
record_format	dspace
spelling	sg-nus-scholar.10635-842352024-11-09T07:32:38Z Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner Wang, G.H. Toh, E.-H. Toh Hoe, K.M. Tripathy, S. Balakurnar, S. Lo, G.-Q. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2006.346814 Technical Digest - International Electron Devices Meeting, IEDM - TDIMD 2014-10-07T04:50:21Z 2014-10-07T04:50:21Z 2006 Conference Paper Wang, G.H.,Toh, E.-H.,Toh,Hoe, K.M.,Tripathy, S.,Balakurnar, S.,Lo, G.-Q.,Samudra, G.,Yeo, Y.-C. (2006). Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2006.346814" target="_blank">https://doi.org/10.1109/IEDM.2006.346814</a> 1424404398 01631918 http://scholarbank.nus.edu.sg/handle/10635/84235 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/IEDM.2006.346814
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wang, G.H. Toh, E.-H. Toh Hoe, K.M. Tripathy, S. Balakurnar, S. Lo, G.-Q. Samudra, G. Yeo, Y.-C.
format	Conference or Workshop Item
author	Wang, G.H. Toh, E.-H. Toh Hoe, K.M. Tripathy, S. Balakurnar, S. Lo, G.-Q. Samudra, G. Yeo, Y.-C.
spellingShingle	Wang, G.H. Toh, E.-H. Toh Hoe, K.M. Tripathy, S. Balakurnar, S. Lo, G.-Q. Samudra, G. Yeo, Y.-C. Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner
author_sort	Wang, G.H.
title	Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner
title_short	Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner
title_full	Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner
title_fullStr	Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner
title_full_unstemmed	Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner
title_sort	strained silicon-germanium-on-insulator n-mosfets featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84235
_version_	1821220189480419328

Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner

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