Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner

• Main Authors: Wang, G.H., Toh, E.-H., Toh, Hoe, K.M., Tripathy, S., Balakurnar, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84235
• Institution: National University of Singapore

10.1109/IEDM.2006.346814